Devices, systems and methods for electrostatic force enhanced semiconductor bonding

ABSTRACT

Various embodiments of microelectronic devices and methods of manufacturing are described herein. In one embodiment, a method for enhancing wafer bonding includes positioning a substrate assembly on a unipolar electrostatic chuck in direct contact with an electrode, electrically coupling a conductor to a second substrate positioned on top of the first substrate, and applying a voltage to the electrode, thereby creating a potential differential between the first substrate and the second substrate that generates an electrostatic force between the first and second substrates.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.16/206,895, now U.S. Pat. No. 11,114,328, filed Nov. 30, 2018, which isa continuation of U.S. application Ser. No. 14/173,489, filed Feb. 5,2014, now U.S. Pat. No. 10,153,190, each of which are incorporatedherein by reference in their entirety.

TECHNICAL FIELD

The present technology is related to semiconductor devices, systems andmethods. In particular, some embodiments of the present technology arerelated to devices, systems and methods for enhanced bonding betweensemiconductor materials.

BACKGROUND

In semiconductor manufacturing, several processes exist for adding alayer of material to a semiconductor substrate, including transferring alayer of material from one semiconductor substrate to another. Suchprocesses include methods for forming silicon-on-insulator (“SOI”)wafers, semiconductor-metal-on-insulator (“SMOI”) wafers, andsilicon-on-polycrystalline-aluminum-nitride (“SOPAN”) wafers. Forexample, FIGS. 1A-1D are partially schematic cross-sectional viewsillustrating a semiconductor assembly in a prior art method fortransferring a silicon material from one substrate to another. FIG. 1Aillustrates a first substrate 100 including a base material 104 and anoxide material 102 on the base material 104. As shown in FIG. 1B, asecond substrate 120 is then positioned on the first substrate 100 forbonding (as indicated by arrow A). The second substrate 120 alsoincludes a silicon material 124 and an oxide material 122 on the siliconmaterial 124. The second substrate 120 is positioned on the firstsubstrate 100 such that the first substrate oxide material 102 contactsthe second substrate oxide material 122 and forms an oxide-oxide bond.The silicon material 124 has a first portion 124 a and a second portion124 b delineated by an exfoliation material 130 at a selected distancebelow a downwardly facing surface of the first portion 124 a. Theexfoliation material 130 can be, for example, an implanted region ofhydrogen, boron, and/or other exfoliation agents.

FIG. 1C illustrates the semiconductor assembly formed by bonding thefirst substrate 100 to the second substrate 120. Once the substrates100, 120 are bonded, the first portion 124 a of the semiconductormaterial 124 is removed from the second portion 124 b by heating theassembly such that the exfoliation material 130 cleaves the siliconmaterial 124. The second portion 124 b remains attached to the firstsubstrate 100, as shown in FIG. 1D, and has a desired thickness forforming semiconductor components in and/or on the second portion 124 b.The first portion 124 a of the silicon material 124 can be recycled tosupply additional thicknesses of silicon material to other firstsubstrates.

One challenge of transferring silicon materials from one substrate toanother is that poor bonding between the first and second substrates cangreatly affect the yield and cost of the process. In transfer processes,“bonding” generally includes adhering two mirror-polished semiconductorsubstrates to each other without the application of any macroscopicadhesive layer or external force. During and/or after the layer transferprocess, poor bonding can cause voids, islands or other defects betweenthe two bonded substrate surfaces. For example, the material propertiesof certain materials can result in poor bonding, such as silicon with ametal of SMOI or a poly-aluminum nitride surface with silicon of SOPAN.

Conventional bonding processes also include applying an externalmechanical force (e.g., a weight or a compressive force) to the firstand second substrates for a period of time. In addition to adding time,adding cost, and reducing throughput, bonding processes that use anexternal force suffer from several drawbacks. First, the downward forceapplied on the second substrate is not distributed uniformly and cancause defects in the substrate or even break one or both substrates.Second, because the force is not distributed uniformly, the magnitude ofthe applied mechanical force is limited to the maximum allowed force inthe area with the highest force concentration, which means that otherareas of the substrate do not experience the maximum force. Third, theuse of an external mechanical force can contaminate the semiconductorassembly. Last, some semiconductor devices can have large depressions inthe under-layer topography because of dishing from priorchemical-mechanical planarization processing making it difficult to bondthe oxide layers to each other.

BRIEF DESCRIPTION OF THE DRAWINGS

Many aspects of the present technology can be better understood withreference to the following drawings. The components in the drawings arenot necessarily to scale. Instead, emphasis is placed on illustratingclearly the principles of the present technology.

FIGS. 1A-1D are schematic cross-sectional views of various stages in amethod for transferring and bonding a semiconductor layer according tothe prior art.

FIG. 2A is a schematic cross-sectional view of a bonding systemconfigured in accordance with the present technology.

FIG. 2B is a schematic cross-sectional view of the bonding system inFIG. 2A supporting a semiconductor assembly.

FIG. 3 is a schematic cross-sectional view of a bonding systemconfigured in accordance with another embodiment of the presenttechnology.

DETAILED DESCRIPTION

Several embodiments of the present technology are described below withreference to processes for enhanced substrate-to-substrate bonding. Manydetails of certain embodiments are described below with reference tosemiconductor devices and substrates. The term “semiconductor device,”“semiconductor substrate,” or “substrate” is used throughout to includea variety of articles of manufacture, including, for example,semiconductor wafers or substrates of other materials that have a formfactor suitable for semiconductor manufacturing processes. Several ofthe processes described below may be used to improve bonding on and/orbetween substrates.

FIGS. 2A-3 are partially schematic cross-sectional views of enhancedbonding systems and methods in accordance with embodiments of thetechnology. In the following description, common acts and structures areidentified by the same reference numbers. Although the processingoperations and associated structures illustrated in FIGS. 2A-3 aredirected to SOI-based transfers, in certain embodiments the process canbe used to enhance bonding in other material-based transfer layermethods, such as SMOI-based transfers, SOPAN-based transfers, and thelike.

FIG. 2A is a cross-sectional side view of one embodiment of an isolatedbonding system 300 (“system 300”), and FIG. 2B is a cross-sectional sideview of the system 300 supporting a substrate assembly 307. As shown inFIG. 2B, the substrate assembly 307 includes a first substrate 303(e.g., a handling substrate) and a second substrate 305 (e.g., a donorsubstrate) on the handling substrate 303. The first substrate 303 canhave a base material 306 and first oxide layer 308, and the secondsubstrate 305 can include a semiconductor material 310 and a secondoxide layer 309. The base material 306 can be an insulator, polysiliconaluminum nitride, a semiconductor material (e.g., silicon (1,0,0),silicon carbide, etc.), a metal, or another suitable material. Thesemiconductor material 310 can include, for example, a silicon wafermade from silicon (1,1,1) or other semiconductor materials that areparticularly well suited for epitaxial formation of semiconductorcomponents or other types of components. In other embodiments, only oneof the first or second substrates 303, 305 may include an oxide layer.Additionally, the orientation of the first and second substrates 303 and305 can be inverted relative to the orientation shown in FIG. 2B.

As shown in FIG. 2B, the second substrate 305 can be positioned on thefirst substrate 303 such that the second oxide layer 309 of the secondsubstrate 305 contacts the first oxide layer 308 of the first substrate303. As such, the shared contact surfaces of the first and second oxidelayers 308, 309 form a bonding interface 322 between the first andsecond substrates 303, 305. Additionally, the first and second oxidelayers 308, 309 form a dielectric barrier 320 between the first andsecond substrates 303, 305. The dielectric barrier 320 can have athickness d that is between about 1 nm and about 20 μm. In a particularembodiment, the dielectric barrier 320 can have a thickness d that isbetween about 1 μm and about 10 μm.

Referring to FIGS. 2A and 2B together, the system 300 can include aunipolar electrostatic chuck (ESC) 301 having an electrode 304, aconductor 312, and a power supply 314. In some embodiments, the ESC 301includes a dielectric base 302 that carries the electrode 304. Theelectrode 304 can include a support surface 316 configured to receivethe first substrate 303 and/or the substrate assembly 307. The powersupply 314 is coupled to the electrode 304 and configured to supply avoltage to the electrode 304, and the conductor 312 is electricallycoupled to a ground source G. The substrate assembly 307 can bepositioned on the support surface 316 of the electrode 304, and theconductor 312 can contact a portion of the substrate assembly 307opposite the dielectric barrier 320. In the embodiment shown in FIG. 2Bthe first substrate 303 contacts the electrode 304 and the secondsubstrate 305 contacts the conductor 312.

The conductor 312 can be a single contact pin or pad connected to theground source G via a connector 318. The conductor 312 can be configuredto engage all or a portion of the surface of the substrate assembly 307facing away from the ESC 301. For example, as shown in FIG. 2B, theconductor 312 can be a pad that covers only a portion of the surface ofthe second substrate 305, and the conductor 312 can be positioned at thecenter of the second substrate 305. In other embodiments, the conductor312 can contact any other portion of the second substrate 305 and/or theconductor 312 can have the same size as the second substrate (shown indashed lines). Although the conductor 312 includes only a single contactpad in the embodiment shown in FIG. 2B, in other embodiments theconductor 312 can have multiple pins, pads or other conductive featuresconfigured in a pattern to provide the desired current distributionacross the second substrate 305. In other embodiments, the conductor 312can have any size, shape and/or configuration, such as concentric rings,an array of polygonal pads, etc.

Unlike conventional ESCs, the ESC 301 of the present technology does nothave a dielectric layer separating the electrode 304 from the firstsubstrate 303 and/or substrate assembly 307. In other words, when thefirst substrate 303 is on the support surface 316, the first substrate303 directly contacts the electrode 304 without a dielectric materialattached to the support surface 316 of the electrode 304. Although insome cases a bottom surface of the first substrate 303 may include anative oxide film, the film is very thin (e.g., 10-20 Å) and thusprovides negligible electrical resistance between the electrode 304 andthe first substrate 303. As a result, voltages applied to the electrode304 pass directly to the first substrate 303. Because the firstsubstrate 303 directly contacts the electrode 304 and has negligibleinternal resistance, a conventional bi-polar or multi-polar ESC cannotbe used with the system 300 as the first substrate would provide adirect electrical connection between the electrodes and short thesystem.

In operation, the first substrate 303 is positioned on the supportsurface 316 in direct electrical contact with the electrode 304. If thesecond substrate 305 is not already positioned on the first substrate303, the second substrate 305 can be manually or robotically placed onthe first substrate 303. For example, as shown in FIG. 2B, the connector318 can be in the form of a conductive robotic arm that can support thesecond substrate 305 and move the second substrate 305 over the firstsubstrate 303. The robotic arm can include a negative pressure source(not shown) at one end that engages and holds the second substrate 305until a desired position is achieved.

Once the second substrate 305 is in position for bonding with the firstsubstrate 303, the conductor 312 can be placed in contact with thesecond substrate 305. The power supply 314 is then activated to apply avoltage to the electrode 304. As previously discussed, the firstsubstrate 303 operates as a continuation of the electrode 304 becausethe first substrate 303 directly contacts the electrode 304 without adielectric material between the two. As a result, an electrical chargeaccumulates at or near a top surface 303 a of the first substrate 303thereby causing an opposite electrical charge to accumulate at or near abottom surface 305 a of the second substrate 305. Accordingly, anelectric potential is established across the dielectric barrier 320between the first and second substrates 303, 305. The electric potentialcreates an electrostatic force F that pulls the second substrate 305towards the first substrate 303 and enhances the bond between the firstand second substrates 303, 305.

The electrostatic force F generated by the system 300 is significantlygreater than that of conventional systems because it improves theelectrical contact with the first substrate and decreases the dielectricdistance between the first and second substrates 303, 305. The magnitudeof the electrostatic force F can be determined by the following equation(1):

$\begin{matrix}{{F = {\frac{1}{2}{ɛ_{0}( \frac{k\; V}{d} )}^{2}}},} & (1)\end{matrix}$

where

k is a dielectric constant;

d is the dielectric thickness; and

V is the applied voltage.

As indicated by the equation (1), the smaller the dielectric thickness dand/or the greater the applied voltage V, the greater the electrostaticforce F. As such, the magnitude of the electrostatic force F can becontrolled by adjusting the applied voltage V and/or the dielectricthickness d. In some embodiments, the system 300 can include acontroller (not shown) that automatically controls the magnitude,duration, and/or timing of the electrostatic force F by adjusting theapplied voltage V.

The system 300 and associated methods are expected to provide severaladvantages over conventional methods for enhanced substrate bonding thatapply an external mechanical force. First, the magnitude of theelectrostatic force F achieved by the system 300 is considerably greaterthan the compressive force imposed by conventional mechanical forceapplications. By way of example, on a 6-inch wafer, mechanicalforce-generating devices can apply a maximum force of 100 kN, while thecurrent system can generate an electrostatic force F of greater than 200kN. Also, in contrast to conventional methods and systems, the system300 can evenly distribute the electrostatic force F across thesubstrates 303, 305. As evidenced by equation (1) above, the magnitudeof the electrostatic force F is only dependent on two variables: theapplied voltage V and the dielectric thickness d. Both the appliedvoltage V and the dielectric thickness d are intrinsically constantacross the cross-sectional area of the substrates 303, 305.Additionally, in conventional methods utilizing a mechanical compressiveforce, the handling substrate and/or substrate assembly would have to bemoved from one machine to the next and/or a force-generating machinewould have to be moved into the vicinity of the handling substrateand/or substrate assembly. The current system, however, does not requireany moving of machine or substrates and can achieve enhanced bonding byadjusting the applied voltage. As such, the system 300 of the presenttechnology can be operated at a lower cost and higher throughput.

FIG. 3 is a cross-sectional side view of another embodiment of a bondingsystem 400 (“system 400”) configured in accordance with the presenttechnology. The first substrate 403, second substrate 405 and ESC 401can be generally similar to the first substrate 303, second substrate305 and ESC 301 described in FIGS. 2A and 2B, and like referencenumerals refer to the components. However, instead of having a conductorin the form of a conductive pin or pad as shown in FIG. 3 , the system400 includes a plasma source 424, a plasma chamber 422 filled with aplasma gas P that defines a conductor 423 electrically coupled to theplasma gas P. The plasma gas P is electrically conductive such that theplasma gas P is also a conductor. The conductor 423, for example, can beelectrically connected to a ground source G via an electrical element412 (e.g., an antenna, an electrode, etc.). As shown in FIG. 3 , theplasma chamber 422 extends around at least a portion of the secondsubstrate 405. As such, the first substrate 403 and/or the electrode 404is electrically isolated from the plasma chamber 422.

The plasma gas P can be a noble, easily ionized plasma gas, such asArgon (Ar), Helium (He), Nitrogen (N₂), and others. The plasma source424 can be an inductively coupled-plasma (“ICP”) source, microwave,radiofrequency (“RF”) source and/or other suitable sources. A plasma gasin bulk acts as a virtual conductor. As the plasma gas P is releasedinto the plasma chamber 422, the plasma gas P charges the secondsubstrate 405. Activation of the power supply 414 creates a potentialdifference across the dielectric barrier 420, thereby generating anelectrostatic force F between the substrates 403, 405.

In some embodiments, the system 400 can also include a vacuum source 426connected to the plasma chamber 422 that draws the plasma gasdownwardly. The system 400 can also include additional featurestypically associated with vacuum chamber systems, such as powerconditioners (e.g., rectifiers, filters, etc.), pressure sensors, and/orother suitable mechanical/electrical components.

The system 400 provides several advantages over conventional systems,including those advantages discussed above with reference to the system300. Additionally, the system 400 can reduce contamination as theenhanced bonding is carried out in a pressurized, sealed plasma chamber422.

Any of the above-described systems and methods can include additionalfeatures to expedite substrate processing. For example, any of the abovesystems can include one or more features to automate the bonding and/orlayer transfer process, such as lift pins and/or robotic transfer armsfor loading and unloading the substrates from the system.

From the foregoing, it will be appreciated that specific embodiments ofthe invention have been described herein for purposes of illustration,but that various modifications may be made without deviating from thescope of the invention. Accordingly, the invention is not limited exceptas by the appended claims.

We claim:
 1. A system for enhancing bonding between semiconductormaterials, the system comprising: a unipolar electrostatic chuck, thechuck including a dielectric base and an electrode carried by thedielectric base, wherein the electrode includes a top surface positionedto carry and electrically contact a central portion and a perimeterportion of a first semiconductor material during the bonding; aconductor electrically couplable to a second semiconductor materialduring the bonding; and a power supply operably coupled to the electrodeto apply an electrical bias to the electrode.
 2. The system of claim 1wherein the electrical bias that the power supply applies to theelectrode is an input voltage, and wherein the unipolar electrostaticchuck and the conductor are positioned to apply a compressive force tothe first and second semiconductor materials in response to the inputvoltage.
 3. The system of claim 2, further comprising a controlleroperably coupled to the power supply, wherein the controller isconfigured to dynamically adjust one or more of a magnitude of the inputvoltage during the bonding.
 4. The system of claim 2 wherein the inputvoltage is uniform across the top surface of the unipolar electrostaticchuck during the bonding.
 5. The system of claim 1 wherein the conductorincludes: a plasma chamber extending around at least a portion of thesecond semiconductor material; a a plasma gas filling the plasmachamber, wherein the plasma gas is electrically coupleable to the secondsemiconductor material during the bonding; and a conductive structurepositioned in the plasma chamber and spaced apart from the secondsemiconductor material, wherein the conductive structure is electricallycoupled between the plasma gas and a ground source.
 6. The system ofclaim 5, further comprising a vacuum source in fluid communication withthe plasma chamber, wherein the vacuum source is configured to pull theplasma gas at least partially toward the second semiconductor materialduring the bonding.
 7. The system of claim 1 wherein the top surface ofthe unipolar electrostatic chuck is configured to directly contact thefirst semiconductor material during the bonding.
 8. The system of claim1, further comprising a ground source, wherein the conductor iselectrically coupled to the ground source.
 9. The system of claim 1wherein the conductor is a single conductive structure positioned tocontact and electrically couple to a central portion of the secondsemiconductor material.
 10. The system of claim 1 wherein the conductorincludes a plurality of conductive structures positioned in pattern toprovide a predetermined current distribution during the bonding.
 11. Thesystem of claim 1, further comprising a robotic arm operably coupled tothe conductor, the robotic arm configured to position the secondsemiconductor material prior to the bonding.
 12. A system for enhancingbonding between semiconductor materials, the system comprising: a firstconductive component that includes a unipolar electrode having a supportsurface positioned to carry and electrically contact an entire lowersurface of a first semiconductor material during the bonding, whereinthe first component is operably couplable to a power supply to apply anelectrical bias to the electrode; and a second conductive componentelectrically couplable to a second semiconductor material, wherein thesecond semiconductor material is stacked on top of the firstsemiconductor material during the bonding.
 13. The system of claim 12wherein the electrode is configured to directly electrically contact thelower surface of the first semiconductor material during the bonding.14. The system of claim 12 wherein the first conductive componentfurther includes a dielectric base carrying the electrode.
 15. Thesystem of claim 12 wherein the second conductive component includes atleast one conductive pad configured to contact an upper surface of thesecond semiconductor material.
 16. The system of claim 12 wherein thesecond conductive component includes a plurality of conductive featurespositioned in a pattern to provide a predetermined current distributionacross the second semiconductor material during the bonding.
 17. Thesystem of claim 12 wherein the power supply applies a voltage to theelectrode, wherein the second conductive component is electricallycoupled to a ground source to create a voltage differential across thefirst and second semiconductor materials when the voltage is applied tothe electrode, and wherein the voltage differential results in acompressive force one the first and second semiconductor materials. 18.The system of claim 12 wherein the second conductive component includes:a plasma chamber extending around at least a portion of the secondsemiconductor material; a a plasma gas filling the plasma chamber,wherein the plasma gas is electrically coupleable to the secondsemiconductor material during the bonding; and a conductive structurepositioned in the plasma chamber and spaced apart from the secondsemiconductor material, wherein the conductive structure is electricallycoupled between the plasma gas and a ground source.
 19. The system ofclaim 12, further comprising a robotic arm operably coupled to thesecond conductive component, the robotic arm configured to support andmove the second semiconductor material prior to the bonding.
 20. Thesystem of claim 12, further comprising a controller operably coupled tothe power supply, wherein the controller is configured to dynamicallyadjust the electrical bias during the bonding.